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MRF949T1 Datasheet

  • MRF949T1

  • LOW NOISE TRANSISTORS

  • 170.22KB

  • 14頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF949T1/D
NPN Silicon
Low Noise Transistors
Motorola鈥檚 MRF949 is a high performance NPN transistor designed for use in
high gain, low noise small鈥搒ignal amplifiers. The MRF949 is well suited for low
voltage wireless applications. This device features a 9 GHz DC current
gain鈥揵andwidth product with excellent linearity.
鈥?/div>
Low Noise Figure, NFmin = 1.4 dB (Typ) @ 1 GHz @ 5 mA
鈥?/div>
High Current Gain鈥揃andwidth Product, ft = 9 GHz @ 15 mA
鈥?/div>
Maximum Stable Gain = 18 dB @ 1 GHz @ 5 mA
鈥?/div>
Output Third Order Intercept, OIP3 = +29 dBm @ 1 GHz @ 10 mA
鈥?/div>
Fully Ion鈥揑mplanted with Gold Metallization and Nitride Passivation
鈥?/div>
Available in Tape and Reel Packaging Options:
T1 Suffix = 3,000 Units per Reel
MRF949T1
ICmax = 50 mA
LOW NOISE
TRANSISTORS
CASE 463鈥?1, STYLE 1
(SC鈥?0)
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Power Dissipation (1) TC = 75擄C
Derate linearly above TC = 75擄C @
Collector Current 鈥?Continuous (2)
Maximum Junction Temperature
Storage Temperature
Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
VEBO
PDmax
IC
TJmax
Tstg
R
胃JC
Value
10
20
1.5
0.144
1.92
50
150
鈥?55 to +150
520
Unit
Vdc
Vdc
Vdc
Watts
mW/擄C
mA
擄C
擄C
擄C/W
DEVICE MARKINGS
MRF949T1 = JL
(1) To calculate the junction temperature use TJ = (PD x R
胃JC
) + TC. The case temperature is measured on collector lead adjacent to the package
body.
(2) IC 鈥?Continuous (MTBF > 10 years).
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1998
MRF949T1
1

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