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MRF9210R3 Datasheet

  • MRF9210R3

  • RF Power Field Effect Transistor

  • 481.83KB

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF9210/D
The RF MOSFET Line
RF Power Field Effect Transistor
Designed for broadband commercial and industrial applications with
frequencies from 865 to 895 MHz. The high gain and broadband performance
of this device make it ideal for large - signal, common source amplifier
applications in 26 volt base station equipment.
鈥?/div>
Typical CDMA Performance @ 880 MHz, 26 Volts, I
DQ
= 2 x 950 mA
IS - 95 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13
Output Power 鈥?40 Watts
Power Gain 鈥?16.5 dB
Efficiency 鈥?25.5%
Adjacent Channel Power 鈥?/div>
750 kHz: - 46.2 dBc @ 30 kHz BW
1.98 MHz: - 60 dBc @ 30 kHz BW
鈥?/div>
Internally Matched, Controlled Q, for Ease of Use
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz,
40 Watts Avg. N - CDMA
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
N - Channel Enhancement - Mode Lateral MOSFET
MRF9210R3
880 MHz, 200 W, 26 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
Freescale Semiconductor, Inc...
CASE 375G - 04, STYLE 1
NI - 860C3
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
- 0.5, +15
565
3.2
- 65 to +150
200
Unit
Vdc
Vdc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Value (1)
0.31
Unit
擄C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Charge Device Model
Class
1 (Minimum)
M3 (Minimum)
C7 (Minimum)
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf . Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA RF
錚?/div>
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF9210R3
1

MRF9210R3 產(chǎn)品屬性

  • 250

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 880MHz

  • 16.5dB

  • 26V

  • 10µA

  • -

  • 1.9A

  • 40W

  • 65V

  • NI-860C3

  • NI-860C3

  • 帶卷 (TR)

MRF9210R3相關(guān)型號(hào)PDF文件下載

  • 型號(hào)
    版本
    描述
    廠商
    下載
  • 英文版
    Advanced Semiconductor [NPN SILICON RF TRANSISTOR]
    ASI
  • 英文版
    RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
    MICROSEMI
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    RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
    MICROSEMI ...
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    NPN SILICON RF TRANSISTOR
    ASI
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    NPN SILICON RF TRANSISTOR
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  • 英文版
    RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
    MICROSEMI ...
  • 英文版
    RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
    MICROSEMI
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    RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
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    RF POWER FIELD EFFECT TRANSISTORS
    MOTOROLA
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    RF POWER FIELD EFFECT TRANSISTORS
    MOTOROLA [...
  • 英文版
    RF POWER FIELD EFFECT TRANSISTORS
    MOTOROLA
  • 英文版
    RF POWER FIELD EFFECT TRANSISTORS
    MOTOROLA [...
  • 英文版
    945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOS...
    MOTOROLA
  • 英文版
    945 MHz, 60 W, 26 V LATERAL N-CHANNEL BROADBAND RF POWER MOS...
    MOTOROLA [...
  • 英文版
    RF POWER FIELD EFFECT TRANSISTORS
    MOTOROLA

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