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MRF917T1 Datasheet

  • MRF917T1

  • LOW NOISE HIGH FREQUENCY TRANSISTOR

  • 12頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
from RF Marketing
The RF Small Signal Line
NPN Silicon
High-Frequency Transistors
Designed for low noise, wide dynamic range front end amplifiers, at
frequencies to 1.5 GHz. Specifically aimed at portable communication devices
such as pagers and hand鈥揾eld phones.
鈥?/div>
Small, Surface鈥揗ount Package (SC鈥?0)
鈥?/div>
High Current Gain鈥揃andwidth Product (f
蟿
= 6.0 GHz Typ @ 6.0 V, 20 mA)
鈥?/div>
Low Noise Figure
NF = 1.7 dB (Typ) @ 500 MHz
鈥?/div>
Available in Tape and Reel Packaging.
T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel
MRF917T1
LOW NOISE
HIGH FREQUENCY
TRANSISTOR
CASE 419鈥?2, STYLE 3
(SC鈥?0/SOT鈥?23)
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TC = 75擄C (1)
Derate above 75擄C
Storage Temperature Range
Operating Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Value
12
20
2.0
60
222
3.0
鈥?55 to +150
150
Unit
Vdc
Vdc
Vdc
mAdc
mW
mW/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction鈥搕o鈥揅ase (1)
Symbol
R
胃JC
Value
338
Unit
擄C/W
DEVICE MARKING
MRF917T1 = K
(1) Case temperature measured on the collector lead immediately adjacent to body of package.
MOTOROLA RF
漏
Motorola, Inc. 1996
DEVICE DATA
MRF917T1
1

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