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Silicon NPN, high Frequency, To-72 packaged, Transistor
High Power Gain - Gmax = 15 dB (typ) @ f = 500 MHz
Low Noise Figure
NF = 2.5 dB (typ) @ f = 500 MHz
High FT - 4.5 GHz (typ) @ IC = 20 mAdc
2
1
4
3
1. Emitter
2. Base
3. Collector
4. Case
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TO-72
DESCRIPTION:
Designed primarily for use in High Gain, low noise general purpose amplifiers. Also excellent for high speed switching
applications.
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25
擄
C)
Symbol
V
CEO
V
CBO
V
EBO
I
C
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Value
12
20
3.0
40
Unit
Vdc
Vdc
Vdc
mA
Thermal Data
P
D
Total Device Dissipation @ T
A
= 25潞C
Derate above 25潞C
200
1.6
mWatts
mW/ 潞C
MSC1325.PDF 10-25-99
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