MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF9060/D
The RF Sub鈥揗icron MOSFET Line
RF Power Field Effect Transistors
N鈥揅hannel Enhancement鈥揗ode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large鈥搒ignal, common鈥搒ource amplifier applications in 26
volt base station equipment.
鈥?/div>
Typical Two鈥揟one Performance at 945 MHz, 26 Volts
Output Power 鈥?60 Watts PEP
Power Gain 鈥?17 dB
Efficiency 鈥?40%
IMD 鈥?鈥?1 dBc
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
Output Power
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large鈥揝ignal Impedance Parameters
鈥?/div>
In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
MRF9060R1
MRF9060SR1
945 MHz, 60 W, 26 V
LATERAL N鈥揅HANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B鈥?5, STYLE 1
NI鈥?60
MRF9060R1
CASE 360C鈥?5, STYLE 1
NI鈥?60S
MRF9060SR1
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
MRF9060R1
MRF9060SR1
Storage Temperature Range
Operating Junction Temperature
T
stg
T
J
Symbol
V
DSS
V
GS
P
D
Value
65
鈥?.5, +15
159
0.91
219
1.25
鈥?5 to +200
200
Unit
Vdc
Vdc
Watts
W/擄C
Watts
W/擄C
擄C
擄C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
Class
1 (Minimum)
M1 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
MRF9060R1
MRF9060SR1
Symbol
R
胃JC
Max
1.1
0.8
Unit
擄C/W
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 4
MOTOROLA RF
錚?/div>
Motorola, Inc. 2002
DEVICE DATA
MRF9060R1 MRF9060SR1
1
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