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MRF9002R2 Datasheet

  • MRF9002R2

  • RF Power Field Effect Transistor Array

  • 12頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF9002R2/D
The RF Sub - Micron MOSFET Line
RF Power Field Effect
Transistor Array
MRF9002R2
1.0 GHz, 2 W, 26 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFET
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequen-
cies to 1.0 GHz. The high gain and broadband performance of this device make
it ideal for large - signal, common - source amplifier applications in 26 volt base
station equipment. The device is in a PFP - 16 Power Flat Pack package which
gives excellent thermal performances through a solderable backside contact.
鈥?/div>
Typical Performance at 960 MHz, 26 Volts
Output Power 鈥?2 Watts Per Transistor
Power Gain 鈥?18 dB
Efficiency 鈥?50%
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 2 Watts CW
Output Power
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
In Tape and Reel. R2 Suffix = 1,500 Units per 16 mm, 13 inch Reel.
Freescale Semiconductor, Inc...
CASE 978 - 03
PLASTIC
PFP - 16
PIN CONNECTIONS
N.C.
N.C.
GATE1
N.C.
GATE2
N.C.
GATE3
N.C.
1
2
3
4
5
6
7
8
(Top View)
NOTE: Exposed backside flag is source
terminal for transistors.
16
15
14
13
12
11
10
9
DRAIN 1鈭?
DRAIN 1鈭?
DRAIN 2鈭?
DRAIN 2鈭?
N.C.
DRAIN 3鈭?
DRAIN 3鈭?
N.C.
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Dissipation Per Transistor @ T
C
= 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Characteristic
Thermal Resistance, Junction to Case, Single Transistor
Symbol
R
胃JC
Value
65
- 0.5, + 15
4
- 65 to +150
150
Unit
Vdc
Vdc
Watts
擄C
擄C
THERMAL CHARACTERISTICS
Value
12
Unit
擄C/W
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 4
MOTOROLA RF
錚?/div>
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF9002R2
1

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