MRF899 Datasheet

IC型號(hào)：
MRF899
PDF描述：
RF POWER TRANSISTOR NPN SILICON
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MOTOROLA

The RF Line

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MRF899/D

NPN Silicon

RF Power Transistor

Designed for 26 Volt UHF large鈥搒ignal, common emitter, Class AB linear

amplifier applications in industrial and commercial FM / AM equipment operating

in the range 800 鈥?960 MHz.

鈥?/div>

Specified 26 Volt, 900 MHz Characteristics

Output Power = 150 Watts (PEP)

Minimum Gain = 8.0 dB @ 900 MHz, Class AB

Minimum Efficiency = 35% @ 900 MHz, 150 Watts (PEP)

Maximum Intermodulation Distortion 鈥?28 dBc @ 150 Watts (PEP)

鈥?/div>

Characterized with Series Equivalent Large鈥揝ignal Parameters from 800

to 960 MHz

鈥?/div>

Silicon Nitride Passivated

鈥?/div>

100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR

@ 26 Vdc, and Rated Output Power

鈥?/div>

Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal

Migration

鈥?/div>

Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

MRF899

150 W, 900 MHz

RF POWER

TRANSISTOR

NPN SILICON

CASE 375A鈥?1, STYLE 1

MAXIMUM RATINGS

Rating

Collector鈥揈mitter Voltage

Emitter鈥揃ase Voltage

Collector鈥揅urrent 鈥?Continuous

Total Device Dissipation @ TC = 25擄C

Derate above 25擄C

Storage Temperature Range

Symbol

VCEO

VCES

VEBO

Tstg

Characteristic

Thermal Resistance, Junction to Case

Symbol

胃JC

Value

4.0

230

1.33

鈥?65 to + 150

Unit

Vdc

Adc

Watts

W/擄C

擄C

THERMAL CHARACTERISTICS

Max

0.75

Unit

擄C/W

ELECTRICAL CHARACTERISTICS

(TC = 25擄C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector鈥揈mitter Breakdown Voltage (IC = 100 mAdc, IB = 0)

Collector鈥揈mitter Breakdown Voltage (IC = 50 mAdc, VBE = 0)

Emitter鈥揃ase Breakdown Voltage (IE = 10 mAdc, IC = 0)

Collector Cutoff Current (VCE = 30 Vdc, VBE = 0)

V(BR)CEO

V(BR)CES

V(BR)EBO

ICES

hFE

Cob

4.0

鈥?/div>

4.9

鈥?/div>

Vdc

mAdc

ON CHARACTERISTICS

DC Current Gain (ICE = 1.0 Adc, VCE = 5.0 Vdc)

120

鈥?/div>

DYNAMIC CHARACTERISTICS

Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1.0 MHz) (1)

(1) For information only. This part is collector matched.

鈥?/div>

(continued)

REV 7

漏

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1997

MRF899

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