MRF898 Datasheet

IC型號(hào)：
MRF898
PDF描述：
RF POWER TRANSISTOR NPN SILICON
文件大?。?/label>
110.04KB
PDF頁數(shù)：
4頁
芯片廠家：
MOTOROLA

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MOTOROLA

The RF Line

SEMICONDUCTOR TECHNICAL DATA

Order this document

by MRF898/D

NPN Silicon

RF Power Transistor

. . . designed for 24 Volt UHF large鈥搒ignal, common base amplifier applications

in industrial and commercial FM equipment operating in the range of

850 鈥?960 MHz.

鈥?/div>

Motorola Advanced Amplifier Concept Package

鈥?/div>

Specified 24 Volt, 900 MHz Characteristics

Output Power = 60 Watts

Power Gain = 7.0 dB Min

Efficiency = 60% Min

鈥?/div>

Double Input/Output Matched for Wideband Performance and Simplified

External Matching

鈥?/div>

Series Equivalent Large鈥揝ignal Characterization

鈥?/div>

Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal

Migration

鈥?/div>

Silicon Nitride Passivated

鈥?/div>

Circuit board photomaster available upon request by contacting

RF Tactical Marketing in Phoenix, AZ.

MRF898

60 W, 850 鈥?960 MHz

RF POWER

TRANSISTOR

NPN SILICON

CASE 333A鈥?2, STYLE 1

MAXIMUM RATINGS

Rating

Collector鈥揈mitter Voltage

Collector鈥揃ase Voltage

Emitter鈥揃ase Voltage

Collector Current 鈥?Continuous

Total Device Dissipation @ TC = 25擄C

Derate above 25擄C

Storage Temperature Range

Symbol

VCEO

VCBO

VEBO

Tstg

Characteristic

Thermal Resistance, Junction to Case

Symbol

胃JC

Value

4.0

175

1.0

鈥?65 to +150

Unit

Vdc

Adc

Watts

W/擄C

擄C

THERMAL CHARACTERISTICS

Max

1.0

Unit

擄C/W

ELECTRICAL CHARACTERISTICS

(TC = 25擄C unless otherwise noted.)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector鈥揈mitter Breakdown Voltage

(IC = 50 mAdc, IB = 0)

Collector鈥揈mitter Breakdown Voltage

(IC = 50 mAdc, VBE = 0)

Emitter鈥揃ase Breakdown Voltage

(IE = 5.0 mAdc, IC = 0)

Collector Cutoff Current

(VCE = 30 Vdc, VBE = 0, TC = 25擄C)

V(BR)CEO

V(BR)CES

V(BR)EBO

ICES

4.0

鈥?/div>

Vdc

mAdc

(continued)

REV 6

漏

MOTOROLA RF DEVICE DATA

Motorola, Inc. 1994

MRF898

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