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MRF897 Datasheet

  • MRF897

  • RF POWER TRANSISTOR NPN SILICON

  • 155.50KB

  • 6頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF897/D
NPN Silicon
RF Power Transistor
Designed for 24 Volt UHF large鈥搒ignal, common emitter, class鈥揂B linear
amplifier applications in industrial and commercial FM/AM equipment operating
in the range 800鈥?970 MHz.
鈥?/div>
Specified 24 Volt, 900 MHz Characteristics
Output Power = 30 Watts
Minimum Gain = 10 dB @ 900 MHz, class鈥揂B
Minimum Efficiency = 30% @ 900 MHz, 30 Watts (PEP)
Maximum Intermodulation Distortion 鈥?0 dBc @ 30 Watts (PEP)
鈥?/div>
Characterized with Series Equivalent Large鈥揝ignal Parameters from 800
to 960 MHz
鈥?/div>
Silicon Nitride Passivated
鈥?/div>
100% Tested for Load Mismatch Stress at all Phase Angles with 5:1 VSWR
@ 26 Vdc, and Rated Output Power
鈥?/div>
Gold Metalized, Emitter Ballasted for Long Life and Resistance to Metal鈥?/div>
Migration
鈥?/div>
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MRF897
30 W, 900 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 395B鈥?1, STYLE 1
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揈mitter Voltage
Emitter鈥揃ase Voltage
Collector鈥揅urrent 鈥?Continuous
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Storage Temperature Range
Symbol
VCEO
VCES
VEBO
IC
PD
Tstg
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Value
30
60
4.0
4.0
105
0.60
鈥?65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
THERMAL CHARACTERISTICS
Max
1.67
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage (IC = 50 mAdc, IB = 0)
Collector鈥揈mitter Breakdown Voltage (IC = 50 mAdc, VBE = 0)
Emitter鈥揃ase Breakdown Voltage (IE = 5 mAdc, IC = 0)
Collector Cutoff Current (VCE = 30 Vdc, VBE = 0)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
hFE
Cob
30
60
4.0
鈥?/div>
33
80
4.7
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
10.0
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain (ICE = 1.0 Adc, VCE = 5 Vdc)
30
80
120
鈥?/div>
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 24 Vdc, IE = 0, f = 1.0 MHz)
14
21
28
pF
(continued)
REV 6
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF897
1

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