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MRF847 Datasheet

  • MRF847

  • RF POWER TRANSISTOR NPN SILICON

  • 104.86KB

  • 4頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF847/D
NPN Silicon
RF Power Transistor
. . . designed for 12.5 volt UHF large鈥搒ignal,
common鈥揵ase
amplifier applica-
tions in industrial and commercial FM equipment operating in the range of
806 鈥?960 MHz.
鈥?/div>
Specified 12.5 Volt, 870 MHz Characteristics
Output Power = 45 Watts
Power Gain = 4.5 dB Min
Efficiency = 60% Min
鈥?/div>
Series Equivalent Large鈥揝ignal Characterization
鈥?/div>
Internally Matched Input for Broadband Operation
鈥?/div>
Tested for Load Mismatch Stress at All Phase Angles with 10:1 VSWR @
High Line and Rated Drive
鈥?/div>
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
鈥?/div>
Silicon Nitride Passivated
MRF847
45 W, 870 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 319鈥?7, STYLE 1
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TA = 25擄C
Derate above 25擄C
Storage Temperature Range
Junction Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Value
16.5
38
4.0
12
150
0.85
鈥?65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Max
1.17
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Emitter鈥揃ase Breakdown Voltage
(IE = 5.0 mAdc, IC = 0)
Collector鈥揈mitter Breakdown Voltage
(IC = 50 mAdc, IB = 0)
Collector鈥揈mitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
Collector Cutoff Current
(VCE = 15 Vdc, VBE = 0)
V(BR)EBO
V(BR)CEO
V(BR)CES
ICES
4.0
16.5
38
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
10
Vdc
Vdc
Vdc
mAdc
(continued)
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF847
1

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