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MRF7S19100NBR1 Datasheet

  • MRF7S19100NBR1

  • Freescale Semiconductor, Inc [RF Power Field Effect Transis...

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MRF7S19100N
Rev. 2, 8/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to
1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be
used in Class AB and Class C for PCN - PCS/cellular radio and WLL
applications.
鈥?/div>
Typical Single - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
1000 mA, P
out
= 29 Watts Avg., Full Frequency Band, 3GPP Test Model 1,
64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal
PAR = 7.5 dB @ 0.01% Probability on CCDF.
Power Gain 鈥?17.5 dB
Drain Efficiency 鈥?30%
Device Output Signal PAR 鈥?6.1 dB @ 0.01% Probability on CCDF
ACPR @ 5 MHz Offset 鈥?- 38 dBc in 3.84 MHz Channel Bandwidth
鈥?/div>
Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 100 Watts CW
Peak Tuned Output Power
鈥?/div>
P
out
@ 1 dB Compression Point
w
100 W CW
Features
鈥?/div>
100% PAR Tested for Guaranteed Output Power Capability
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Internally Matched for Ease of Use
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Digital Predistortion Error Correction Systems
鈥?/div>
200擄C Capable Plastic Package
鈥?/div>
RoHS Compliant
鈥?/div>
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF7S19100NR1
MRF7S19100NBR1
1930 - 1990 MHz, 29 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF7S19100NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF7S19100NBR1
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Operating Voltage
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
V
DD
T
stg
T
J
Value
- 0.5, +65
- 0.5, +10
32, +0
- 65 to +200
200
Unit
Vdc
Vdc
Vdc
擄C
擄C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 82擄C, 100 W CW
Case Temperature 79擄C, 29 W CW
Symbol
R
胃JC
Value
(1,2)
0.57
0.68
Unit
擄C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
漏
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF7S19100NR1 MRF7S19100NBR1
1
RF Device Data
Freescale Semiconductor

MRF7S19100NBR1 產(chǎn)品屬性

  • 500

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 1.93GHz

  • 17.5dB

  • 28V

  • 10µA

  • -

  • 1A

  • 29W

  • 65V

  • TO-272BB

  • TO-272 WB-4

  • 帶卷 (TR)

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