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MRF6V2150NBR1 Datasheet

  • MRF6V2150NBR1

  • Freescale Semiconductor, Inc [RF Power Field-Effect Transis...

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MRF6V2150N
Rev. 1, 5/2007
RF Power Field - Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for CW large - signal output and driver applications with
frequencies up to 450 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
鈥?/div>
Typical CW Performance at 220 MHz: V
DD
= 50 Volts, I
DQ
= 450 mA,
P
out
= 150 Watts
Power Gain 鈥?25 dB
Drain Efficiency 鈥?68.3%
鈥?/div>
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 150 Watts CW
Output Power
Features
鈥?/div>
Integrated ESD Protection
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Facilitates Manual Gain Control, ALC and Modulation Techniques
鈥?/div>
200擄C Capable Plastic Package
鈥?/div>
RoHS Compliant
鈥?/div>
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
MRF6V2150NR1
MRF6V2150NBR1
10 - 450 MHz, 150 W, 50 V
LATERAL N - CHANNEL
SINGLE - ENDED
BROADBAND
RF POWER MOSFETs
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6V2150NR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6V2150NBR1
PARTS ARE SINGLE - ENDED
RF
in
/V
GS
RF
out
/V
DS
RF
in
/V
GS
RF
out
/V
DS
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistor.
Figure 1. Pin Connections
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
T
stg
T
J
Value
- 0.5 +110
- 0.5 + 12
- 65 to +150
200
Unit
Vdc
Vdc
擄C
擄C
漏
Freescale Semiconductor, Inc., 2007. All rights reserved.
MRF6V2150NR1 MRF6V2150NBR1
1
RF Device Data
Freescale Semiconductor

MRF6V2150NBR1 產(chǎn)品屬性

  • 500

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 220MHz

  • 25dB

  • 50V

  • 2.5mA

  • -

  • 450mA

  • 150W

  • 110V

  • TO-272BB

  • TO-272 WB-4

  • 帶卷 (TR)

  • MRF6V2150NBR1-NDMRF6V2150NBR1TR

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