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MRF6V2010NBR1 Datasheet

  • MRF6V2010NBR1

  • Freescale Semiconductor, Inc [RF Power Field Effect Transis...

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MRF6V2010N
Rev. 1, 5/2007
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for CW large - signal output and driver applications with
frequencies up to 450 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
鈥?/div>
Typical CW Performance at 220 MHz: V
DD
= 50 Volts, I
DQ
= 30 mA,
P
out
= 10 Watts
Power Gain 鈥?23.9 dB
Drain Efficiency 鈥?62%
鈥?/div>
Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 10 Watts CW
Output Power
Features
鈥?/div>
Integrated ESD Protection
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Facilitates Manual Gain Control, ALC and Modulation Techniques
鈥?/div>
200擄C Capable Plastic Package
鈥?/div>
RoHS Compliant
鈥?/div>
TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
鈥?/div>
TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
MRF6V2010NR1
MRF6V2010NBR1
10 - 450 MHz, 10 W, 50 V
LATERAL N - CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 1265 - 08, STYLE 1
TO - 270 - 2
PLASTIC
MRF6V2010NR1
CASE 1337 - 03, STYLE 1
TO - 272 - 2
PLASTIC
MRF6V2010NBR1
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
T
stg
T
J
Value
- 0.5, +110
- 0.5, +10
- 65 to +150
200
Unit
Vdc
Vdc
擄C
擄C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81擄C, 10 W CW
Symbol
R
胃JC
Value
(1,2)
3.0
Unit
擄C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
漏
Freescale Semiconductor, Inc., 2007. All rights reserved.
MRF6V2010NR1 MRF6V2010NBR1
1
RF Device Data
Freescale Semiconductor

MRF6V2010NBR1 產(chǎn)品屬性

  • 500

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 220MHz

  • 23.9dB

  • 50V

  • 2.5mA

  • -

  • 30mA

  • 10W

  • 110V

  • TO-272BC

  • TO-272-2

  • 帶卷 (TR)

  • MRF6V2010NBR1-NDMRF6V2010NBR1TR

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