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MRF6S21050LR3 Datasheet

  • MRF6S21050LR3

  • RF Power Field Effect Transistors

  • 427.96KB

  • 12頁(yè)

  • FREESCALE

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Freescale Semiconductor
Technical Data
MRF6S21050L
Rev. 0, 3/2005
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for W - CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
鈥?/div>
Typical 2 - carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
= 450 mA,
P
out
= 11.5 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain 鈥?16 dB
Drain Efficiency 鈥?27.7%
IM3 @ 10 MHz Offset 鈥?- 37 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset 鈥?- 40 dBc @ 3.84 MHz Channel Bandwidth
鈥?/div>
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 50 Watts CW
Output Power
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Internally Matched, Controlled Q, for Ease of Use
鈥?/div>
Qualified Up to a Maximum of 32 V
DD
Operation
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
鈥?/div>
Low Gold Plating Thickness on Leads, 40
碌
鈥?/div>
Nominal.
鈥?/div>
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
MRF6S21050LR3
MRF6S21050LSR3
2170 MHz, 11.5 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465E - 04, STYLE 1
NI - 400
MRF6S21050LR3
CASE 465F - 04, STYLE 1
NI - 400S
MRF6S21050LSR3
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
CW Operation
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
CW
Value
- 0.5, +68
- 0.5, +12
151
0.86
- 65 to +150
200
50
Unit
Vdc
Vdc
W
W/擄C
擄C
擄C
W
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
錚?/div>
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF6S21050LR3 MRF6S21050LSR3
1
RF Device Data
Freescale Semiconductor

MRF6S21050LR3 產(chǎn)品屬性

  • 250

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 2.16GHz

  • 16dB

  • 28V

  • 10µA

  • -

  • 450mA

  • 11.5W

  • 68V

  • NI-400

  • NI-400

  • 帶卷 (TR)

  • MRF6S21050LR3-NDMRF6S21050LR3TR

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