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MRF6S18140HSR3 Datasheet

  • MRF6S18140HSR3

  • RF Power Field Effect Transistors N-Channel Enhancement-Mode...

  • 12頁

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MRF6S18140H
Rev. 0, 9/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for N- CDMA base station applications with frequencies from 1805
to 1880 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
鈥?/div>
Typical 2 - Carrier N - CDMA Performance: V
DD
= 28 Volts, I
DQ
= 1200 mA,
P
out
= 29 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync,
Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz.
PAR = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain 鈥?16 dB
Drain Efficiency 鈥?27.5%
IM3 @ 2.5 MHz Offset 鈥?- 36 dBc in 1.2288 MHz Bandwidth
ACPR @ 885 kHz Offset 鈥?- 50.5 dBc in 30 kHz Bandwidth
鈥?/div>
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1840 MHz, 140 Watts CW
Output Power
Features
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Internally Matched for Ease of Use
鈥?/div>
Qualified Up to a Maximum of 32 V
DD
Operation
鈥?/div>
Integrated ESD Protection
鈥?/div>
Lower Thermal Resistance Package
鈥?/div>
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
鈥?/div>
Low Gold Plating Thickness on Leads, 40
渭
鈥?/div>
Nominal.
鈥?/div>
RoHS Compliant
鈥?/div>
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6S18140HR3
MRF6S18140HSR3
1805 - 1880 MHz, 29 W AVG., 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465B - 03, STYLE 1
NI - 880
MRF6S18140HR3
CASE 465C - 02, STYLE 1
NI - 880S
MRF6S18140HSR3
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +68
- 0.5, +12
- 65 to +150
150
225
Unit
Vdc
Vdc
擄C
擄C
擄C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80擄C, 140 W CW
Case Temperature 73擄C, 29 W CW
Symbol
R
胃JC
Value
(2,3)
0.31
0.35
Unit
擄C/W
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
3. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
漏
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6S18140HR3 MRF6S18140HSR3
1
RF Device Data
Freescale Semiconductor

MRF6S18140HSR3 產(chǎn)品屬性

  • 250

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 1.88GHz

  • 16dB

  • 28V

  • 10µA

  • -

  • 1.2A

  • 29W

  • 68V

  • NI-880S

  • NI-880S

  • 帶卷 (TR)

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