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MRF6S18060MBR1 Datasheet

  • MRF6S18060MBR1

  • RF Power Field Effect Transistors

  • 20頁

  • FREESCALE

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Freescale Semiconductor
Technical Data
Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with
this part replacement. N suffix added to part number to indicate transition to lead - free
terminations.
Document Number: MRF6S18060
Rev. 2, 5/2006
RF Power Field Effect Transistors
MRF6S18060MR1
MRF6S18060MBR1
1800 - 2000 MHz, 60 W, 26 V
GSM/GSM EDGE
LATERAL N - CHANNEL
RF POWER MOSFETs
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with
frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and
multicarrier amplifier applications.
GSM Application
鈥?/div>
Typical GSM Performance: V
DD
= 26 Vdc, I
DQ
= 600 mA, P
out
= 60 Watts
CW, Full Frequency Band (1805 - 1880 MHz or 1930 - 1990 MHz)
Power Gain 鈥?15 dB
Drain Efficiency - 50%
GSM EDGE Application
鈥?/div>
Typical GSM EDGE Performance: V
DD
= 26 Volts, I
DQ
= 450 mA,
P
out
= 25 Watts Avg., Full Frequency Band (1805 - 1880 MHz or
1930 - 1990 MHz)
Power Gain 鈥?15.5 dB
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 76 dBc
EVM 鈥?2% rms
鈥?/div>
Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW
Output Power
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Internally Matched for Ease of Use
鈥?/div>
Qualified Up to a Maximum of 32 V
DD
Operation
鈥?/div>
Integrated ESD Protection
鈥?/div>
200擄C Capable Plastic Package
鈥?/div>
In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, +68
- 0.5, +12
216
1.2
- 65 to +175
200
Unit
Vdc
Vdc
W
W/擄C
擄C
擄C
ARCHIVE INFORMATION
CASE 1486 - 03, STYLE 1
TO - 270 WB - 4
PLASTIC
MRF6S18060MR1
CASE 1484 - 04, STYLE 1
TO - 272 WB - 4
PLASTIC
MRF6S18060MBR1
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80擄C, 60 W CW
Case Temperature 77擄C, 25 W CW
Symbol
R
胃JC
Value
(1)
0.81
0.95
Unit
擄C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
漏
Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF6S18060MR1 MRF6S18060MBR1
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION

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