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MRF6P9220HR3 Datasheet

  • MRF6P9220HR3

  • 880 MHz, 47 W AVG., 28 V SINGLE N-CDMA LATERAL N-CHANNEL RF ...

  • 12頁(yè)

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MRF6P9220H
Rev. 1, 11/2005
RF Power Field Effect Transistor
N -Channel Enhancement-Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
鈥?/div>
Typical Single -Carrier N -CDMA Performance @ 880 MHz: V
DD
= 28 Volts,
I
DQ
= 1600 mA, P
out
= 47 Watts Avg., IS -95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain 鈥?20 dB
Drain Efficiency 鈥?30%
ACPR @ 750 kHz Offset 鈥?-47.1 dBc in 30 kHz Bandwidth
鈥?/div>
Capable of Handling 10:1 VSWR, @ 28 Vdc, 880 MHz, 220 Watts CW
Output Power
鈥?/div>
Characterized with Series Equivalent Large -Signal Impedance Parameters
鈥?/div>
Internally Matched for Ease of Use
鈥?/div>
Device Designed for Push -Pull Operation Only
鈥?/div>
Qualified Up to a Maximum of 32 V
DD
Operation
鈥?/div>
Integrated ESD Protection
鈥?/div>
Lower Thermal Resistance Package
鈥?/div>
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
鈥?/div>
Low Gold Plating Thickness on Leads, 40
碌
鈥?/div>
Nominal.
鈥?/div>
Pb -Free and RoHS Compliant
鈥?/div>
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF6P9220HR3
880 MHz, 47 W AVG., 28 V
SINGLE N -CDMA
LATERAL N -CHANNEL
RF POWER MOSFET
CASE 375G-04, STYLE 1
NI-860C3
Table 1. Maximum Ratings
Rating
Drain-Source Voltage
Gate-Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
CW Operation
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
CW
Value
-0.5, +68
-0.5, +12
700
4
- 65 to +150
200
220
Unit
Vdc
Vdc
W
W/擄C
擄C
擄C
W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80擄C, 220 W CW
Case Temperature 76擄C, 47 W CW
Symbol
R
胃JC
Value
(1,2)
0.25
0.28
Unit
擄C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
錚?/div>
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF6P9220HR3
1
RF Device Data
Freescale Semiconductor

MRF6P9220HR3 產(chǎn)品屬性

  • 250

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 880MHz

  • 20dB

  • 28V

  • 10µA

  • -

  • 1.6A

  • 47W

  • 68V

  • NI-860C3

  • NI-860C3

  • 帶卷 (TR)

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