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MRF6P27160HR6 Datasheet

  • MRF6P27160HR6

  • RF Power Field Effect Transistor N-Channel Enhancement-Mode ...

  • 12頁

  • FREESCALE

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Freescale Semiconductor
Technical Data
MRF6P27160H
Rev. 0, 1/2005
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for N - CDMA base station applications with frequencies from 2600
to 2700 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
鈥?/div>
Typical Single - Carrier N - CDMA Performance: V
DD
= 28 Volts, I
DQ
= 2 x
900 mA, P
out
= 35 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot,
Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain 鈥?14.6 dB
Drain Efficiency 鈥?22.6%
ACPR @ 885 kHz Offset 鈥?- 47.8 dBc @ 30 kHz Bandwidth
鈥?/div>
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2700 MHz, 160 Watts CW
Output Power
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Internally Matched, Controlled Q, for Ease of Use
鈥?/div>
Qualified Up to a Maximum of 32 V
DD
Operation
鈥?/div>
Integrated ESD Protection
鈥?/div>
Lower Thermal Resistance Package
鈥?/div>
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
鈥?/div>
Low Gold Plating Thickness on Leads, 40
碌
鈥?/div>
Nominal.
鈥?/div>
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6P27160HR6
2700 MHz, 35 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375D - 05, STYLE 1
NI - 1230
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
CW Operation
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
CW
Value
- 0.5, +68
- 0.5, +12
603
3.45
- 65 to +150
200
160
Unit
Vdc
Vdc
W
W/擄C
擄C
擄C
W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 79擄C, 160 W CW
Case Temperature 71擄C, 35 W CW
Symbol
R
胃JC
Value
(1,2)
0.29
0.31
Unit
擄C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
錚?/div>
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF6P27160HR6
1
RF Device Data
Freescale Semiconductor

MRF6P27160HR6 產(chǎn)品屬性

  • 150

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 2.66GHz

  • 14.6dB

  • 28V

  • 10µA

  • -

  • 1.8A

  • 35W

  • 68V

  • NI-1230

  • NI-1230

  • 帶卷 (TR)

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