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MRF6P21190HR6 Datasheet

  • MRF6P21190HR6

  • RF Power Field Effect Transistor, N-Channel Enhancement-Mode...

  • 12頁

  • FREESCALE

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Freescale Semiconductor
Technical Data
Document Number: MRF6P21190HR6
Rev. 2, 8/2005
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
鈥?/div>
Typical 2 - Carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
=
2 x 950 mA, P
out
= 44 Watts Avg., Full Frequency Band, Channel
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain 鈥?15.5 dB
Drain Efficiency 鈥?26.5%
IM3 @ 10 MHz Offset 鈥?- 37 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset 鈥?- 40 dBc @ 3.84 MHz Channel Bandwidth
鈥?/div>
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 190 Watts CW
Output Power
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Internally Matched for Ease of Use
鈥?/div>
Qualified Up to a Maximum of 32 V
DD
Operation
鈥?/div>
Integrated ESD Protection
鈥?/div>
Lower Thermal Resistance Package
鈥?/div>
Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
Applications
鈥?/div>
Low Gold Plating Thickness on Leads, 40
碌鈥?/div>
Nominal.
鈥?/div>
Pb - Free and RoHS Compliant
鈥?/div>
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6P21190HR6
2170 MHz, 44 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375D - 05, STYLE 1
NI - 1230
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
CW Operation
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
CW
Value
- 0.5, +68
- 0.5, +12
700
4
- 65 to +150
200
190
Unit
Vdc
Vdc
W
W/擄C
擄C
擄C
W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80擄C, 190 W CW
Case Temperature 72擄C, 44 W CW
Symbol
R
胃JC
Value (1,2)
0.25
0.27
Unit
擄C/W
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
2. Refer to AN1955,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
錚?/div>
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF6P21190HR6
1
RF Device Data
Freescale Semiconductor

MRF6P21190HR6 產(chǎn)品屬性

  • RF Devices Discontinuation 01/Jul/2010

  • 150

  • 分離式半導體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 2.11GHz

  • 15.5dB

  • 28V

  • 10µA

  • -

  • 1.9A

  • 44W

  • 68V

  • NI-1230

  • NI-1230

  • 帶卷 (TR)

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