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MRF6522-70 Datasheet

  • MRF6522-70

  • RF Power Field Effect Transistor

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF6522 - 70/D
The RF MOSFET Line
RF Power Field Effect Transistor
Designed for GSM 900 frequency band, the high gain and broadband
performance of this device make it ideal for large - signal, common source
amplifier applications in 26 volt base station equipment.
鈥?/div>
Specified Performance @ Full GSM Band, 921 - 960 MHz, 26 Volts
Output Power, P1dB 鈥?80 Watts (Typ)
Power Gain @ P1dB 鈥?16 dB (Typ)
Efficiency @ P1dB 鈥?58% (Typ)
鈥?/div>
Available in Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
N - Channel Enhancement - Mode Lateral MOSFET
MRF6522鈭?0R3
921 - 960 MHz, 70 W, 26 V
LATERAL N - CHANNEL
RF POWER MOSFET
Freescale Semiconductor, Inc...
CASE 465D - 05, STYLE 1
NI - 600
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
Value
65
鹵
20
7
159
0.9
- 65 to +150
200
Unit
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Value
1.1
Unit
擄C/W
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MOTOROLA RF
錚?/div>
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF6522 - 70R3
1

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