鈥?/div>
Specified 26 Volts, 960 MHz Characteristics
Output Power 鈥?20 Watts CW
Gain 鈥?11 dB Typ
Efficiency 鈥?60% Typ
MRF6409
20 W, 960 MHz
RF POWER TRANSISTOR
NPN SILICON
CASE 319鈥?7, STYLE 2
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揈mitter Voltage
Emitter鈥揃ase Voltage
Collector鈥揅urrent 鈥?Continuous
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
VCEO
VCES
VEBO
IC
PD
Tstg
TJ
Characteristic
Thermal Resistance, Junction to Case (1)
Symbol
R
胃JC
Symbol
Min
Typ
Value
24
55
4.0
5.0
45
0.26
鈥?65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Max
3.8
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted)
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
Emitter鈥揃ase Breakdown Voltage
(IB = 5.0 mAdc, IC =0)
Collector鈥揈mitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
V(BR)CEO
V(BR)EBO
V(BR)CES
24
4.0
55
鈥?/div>
30
5.0
60
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
6.0
Vdc
Vdc
Vdc
mA
Collector鈥揅utoff Current
ICES
(VCE = 30 Vdc, VBE = 0)
(1) Thermal resistance is determined under specified RF operating condition.
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF6409
1
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