鈥?/div>
Circuit Board Photomaster Available by Ordering Document
MRF6408PHT/D from Motorola Literature Distribution.
MRF6408
12 W, 2.0 GHz
RF POWER TRANSISTOR
NPN SILICON
CASE 395C鈥?1, STYLE 1
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揈mitter Voltage
Emitter鈥揃ase Voltage
Collector鈥揅urrent 鈥?Continuous
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
VCEO
VCES
VEBO
IC
PD
Tstg
TJ
Value
24
60
4
5
60
0.35
鈥?65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (1)
Symbol
R
胃JC
Max
2.8
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(IC = 20 mAdc, IB = 0)
Emitter鈥揃ase Breakdown Voltage
(IB = 5.0 mAdc, IC = 0)
Collector鈥揈mitter Breakdown Voltage
(IC = 20 mAdc, VBE = 0)
Collector Cutoff Current
(VCE = 30 Vdc, VBE = 0)
V(BR)CEO
V(BR)EBO
V(BR)CES
ICES
24
4
55
鈥?/div>
30
5
64
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
6
Vdc
Vdc
Vdc
mA
Symbol
Min
Typ
Max
Unit
(1) Thermal resistance is determined under specified RF operating condition.
REV 2
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF6408
1
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