鈥?/div>
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
MRF6402
4.5 W, 1.88 GHz
RF POWER TRANSISTOR
NPN SILICON
CASE 319鈥?7, STYLE 2
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector鈥揅urrent 鈥?Continuous
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
VCER
VCBO
VEBO
IC
PD
Tstg
TJ
Characteristic
Thermal Resistance, Junction to Case (1)
Symbol
R
胃JC
Symbol
Min
Typ
Value
40
45
3.5
0.7
15
0.2
鈥?65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Max
5
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted.)
Characteristic
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(IC = 10 mA, RBE = 75
鈩?
Emitter鈥揃ase Breakdown Voltage
(IE = 5 mAdc)
Collector鈥揃ase Breakdown Voltage (IC = 10 mAdc)
Collector鈥揈mitter Leakage (VCE = 26 V, RBE = 75
鈩?
V(BR)CER
V(BR)EBO
V(BR)CBO
40
3.5
40
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
5
Vdc
Vdc
Vdc
mA
(continued)
ICER
(1) Thermal resistance is determined under specified RF operating condition.
REV 7
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF6402
1
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