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MRF5S9070NR1 Datasheet

  • MRF5S9070NR1

  • RF Power Field Effect Transistors

  • 12頁

  • MOTOROLA   MOTOROLA

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Freescale Semiconductor
Technical Data
MRF5S9070NR1
Rev. 3, 12/2004
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 26 volt base station equipment.
鈥?/div>
Typical Single - Carrier N - CDMA Performance @ 880 MHz, V
DD
= 26 Volts,
I
DQ
= 600 mA, P
out
= 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13)
Power Gain 鈥?17.8 dB
Drain Efficiency 鈥?30%
ACPR @ 750 kHz Offset 鈥?- 47 dBc @ 30 kHz Bandwidth
鈥?/div>
Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 70 Watts CW
Output Power
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Integrated ESD Protection
鈥?/div>
N Suffix Indicates Lead - Free Terminations
鈥?/div>
200擄C Capable Plastic Package
鈥?/div>
In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
MRF5S9070NR1
MRF5S9070MR1
880 MHz, 70 W, 26 V
SINGLE N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1265- 08, STYLE 1
TO - 270 - 2
PLASTIC
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
- 0.5, + 68
- 0.5, + 15
219
1.25
- 65 to +150
200
Unit
Vdc
Vdc
W
W/擄C
擄C
擄C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80擄C, 70 W CW
Case Temperature 78擄C, 14 W CW
Symbol
R
胃JC
Value
(1)
0.80
0.93
Unit
擄C/W
Table 3. ESD Protection Characteristics
Test Methodology
Human Body Model (per JESD22 - A114 - B)
Machine Model (per EIA/JESD22 - A115 - A)
Charge Device Model (per JESD22 - C101- A)
Class
2 (Minimum)
A (Minimum)
IV (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113D, IPC/JEDEC J - STD - 020C
Rating
3
Package Peak Temperature
260
Unit
擄C
1. Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
錚?/div>
Freescale Semiconductor, Inc., 2004. All rights reserved.
MRF5S9070NR1 MRF5S9070MR1
1
RF Device Data
Freescale Semiconductor

MRF5S9070NR1 產(chǎn)品屬性

  • 500

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 880MHz

  • 17.8dB

  • 26V

  • 10µA

  • -

  • 600mA

  • 14W

  • 68V

  • TO-270AA

  • TO-270-2

  • 帶卷 (TR)

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