音影先锋亚洲天堂网|电影世界尽头的爱完整版播放|国产 熟女 91|高清无码免费观看欧美日韩|韩国一区二区三区黄色录像|美女亚洲加勒比在线|亚洲综合网 开心五月|7x成人在线入口|成人网站免费日韩毛片区|国产黄片?一级?二级?三级

MRF5S21100LSR3 Datasheet

  • MRF5S21100LSR3

  • The RF MOSFET Line RF Power Field Effect N-Channel Enhanceme...

  • 12頁

  • MOTOROLA   MOTOROLA

掃碼查看芯片數(shù)據(jù)手冊

上傳產品規(guī)格書

PDF預覽

MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF5S21100L/D
The RF MOSFET Line
RF Power Field Effect Transistors
MRF5S21100LR3
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
鈥?/div>
Typical 2 - carrier W - CDMA Performance for V
DD
= 28 Volts,
I
DQ
= 1050 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =
3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1
-
5 MHz
and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW
@ f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability
on CCDF.
Output Power 鈥?23 Watts Avg.
Power Gain 鈥?13.5 dB
Efficiency 鈥?26%
IM3 鈥?- 37 dBc
ACPR 鈥?- 40 dBc
鈥?/div>
Internally Matched, Controlled Q, for Ease of Use
鈥?/div>
High Gain, High Efficiency and High Linearity
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 100 Watts CW
Output Power
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Qualified Up to a Maximum of 32 V
DD
Operation
鈥?/div>
Low Gold Plating Thickness on Leads. L Suffix Indicates 40
碌鈥?/div>
Nominal.
鈥?/div>
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
- 0.5, +15
250
1.43
- 65 to +150
200
Unit
Vdc
Vdc
Watts
W/擄C
擄C
擄C
N - Channel Enhancement - Mode Lateral MOSFETs
MRF5S21100LSR3
2170 MHz, 23 W AVG.,
2 x W - CDMA, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465 - 06, STYLE 1
NI - 780
MRF5S21100LR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF5S21100LSR3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80擄C, 100 W CW
Case Temperature 80擄C, 23 W CW
Symbol
R
胃JC
Value (1)
0.70
0.76
Unit
擄C/W
(1) Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA RF
錚?/div>
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF5S21100LR3 MRF5S21100LSR3
1

MRF5S21100LSR3相關型號PDF文件下載

  • 型號
    版本
    描述
    廠商
    下載
  • 英文版
    Bel Fuse Inc. [Fast Acting Radial Lead Micro Fuse Series]
    BEL
  • 英文版
    TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-72
    ETC
  • 英文版
    TRANSISTOR | BJT | NPN | 15V V(BR)CEO | 50MA I(C) | TO-72
    ETC
  • 英文版
    Microsemi
  • 英文版
    TRANSISTOR,BJT,PNP,10V V(BR)CEO,70MA I(C),MACRO-X
  • 英文版
    RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
    MICROSEMI ...
  • 英文版
    RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
    MICROSEMI ...
  • 英文版
    Microsemi
  • 英文版
    Motorola, Inc [RF LOW POWER TRANSISTOR NPN SILICON]
    MOTOROLA
  • 英文版
    Motorola, Inc [RF LOW POWER TRANSISTOR NPN SILICON]
    MOTOROLA
  • 英文版
    Microsemi
  • 英文版
    NPN SILICON RF TRANSISTOR
    ASI
  • 英文版
    NPN Silicon High-Frequency Transistors
    MOTOROLA
  • 英文版
    NPN SILICON RF TRANSISTOR
    ASI [Advan...
  • 英文版
    NPN Silicon High-Frequency Transistors
    MOTOROLA [...
  • 英文版
    SILICON NPN RF TRANSISTOR
    ASI
  • 英文版
    SILICON NPN RF TRANSISTOR
    ASI [Advan...
  • 英文版
    RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
    MICROSEMI
  • 英文版
    RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
    MICROSEMI ...
  • 英文版
    RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS
    MICROSEMI ...

掃碼下載APP，
一鍵連接廣大的電子世界。

在線人工客服

買家服務：
賣家服務：
技術客服：

0571-85317607

網站技術支持

13606545031

客服在線時間周一至周五
9:00-17:30

關注官方微信號，
第一時間獲取資訊。

建議反饋

聯(lián)系人：

聯(lián)系方式：

按住滑塊，拖拽到最右邊
>>
感謝您向阿庫提出的寶貴意見，您的參與是維庫提升服務的動力！意見一經采納，將有感恩紅包奉上哦！