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MRF5S19130R3 Datasheet

  • MRF5S19130R3

  • N-Channel Enhancement-Mode Lateral MOSFETs

  • 12頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF5S19130/D
MRF5S19130R3
RF Power Field Effect Transistors MRF5S19130SR3
The RF MOSFET Line
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for PCN and PCS base station applications at frequencies from
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
鈥?/div>
Typical 2 - Carrier N - CDMA Performance for V
DD
= 28 Volts,
I
DQ
= 1200 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Output Power 鈥?26 Watts Avg.
Power Gain 鈥?13 dB
Efficiency 鈥?25%
IM3 鈥?- 37 dBc
ACPR 鈥?- 51 dB
鈥?/div>
Internally Matched, Controlled Q, for Ease of Use
鈥?/div>
High Gain, High Efficiency and High Linearity
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Capable of Handling 10:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,
110 Watts CW Output Power
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Qualified Up to a Maximum of 32 V Operation
鈥?/div>
Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
CW Operation
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
CW
Value
65
- 0.5, +15
324
1.85
- 65 to +150
200
110
Unit
Vdc
Vdc
Watts
W/擄C
擄C
擄C
Watts
MRF5S19130R3 and MRF5S19130SR3 replaced by MRF5S19130HR3 and
MRF5S19130HSR3. 鈥淗鈥?suffix indicates lower thermal resistance package.
1990 MHz, 26 W AVG.,
2 x N - CDMA, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
ARCHIVE INFORMATION
Freescale Semiconductor, Inc.
CASE 465B - 03, STYLE 1
NI - 880
MRF5S19130R3
CASE 465C - 02, STYLE 1
NI - 880S
MRF5S19130SR3
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80擄C, 110 W CW
Case Temperature 80擄C, 26 W CW
Symbol
R
胃JC
Max
0.54
0.60
Unit
擄C/W
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA RF
錚?/div>
Motorola, Inc. 2003
DEVICE DATA
For More Information On This Product,
For More Information On This Product,
Go to: www.freescale.com
Go to: www.freescale.com
MRF5S19130R3 MRF5S19130SR3
1
ARCHIVE INFORMATION

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