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MRF5S19100HSR3 Datasheet

  • MRF5S19100HSR3

  • The RF MOSFET Line RF Power Field Effect Transistors N-Chann...

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  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF5S19100H/D
The RF MOSFET Line
RF Power Field Effect Transistors
MRF5S19100HR3
Designed for PCN and PCS base station applications with frequencies up to
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
鈥?/div>
Typical 2 - Carrier N - CDMA Performance: V
DD
= 28 Volts,
I
DQ
= 1000 mA, P
out
= 22 Watts Avg., Full Frequency Band. IS - 95 (Pilot,
Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
Power Gain 鈥?13.9 dB
Drain Efficiency 鈥?25.5%
IM3 @ 2.5 MHz Offset 鈥?- 36.5 dBc @ 1.2288 MHz Channel Bandwidth
ACPR @ 885 kHz Offset 鈥?- 50.7 dBc @ 30 kHz Channel Bandwidth
鈥?/div>
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 100 Watts CW
Output Power
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Internally Matched, Controlled Q, for Ease of Use
鈥?/div>
Qualified Up to a Maximum of 32 V
DD
Operation
鈥?/div>
Integrated ESD Protection
鈥?/div>
Lower Thermal Resistance Package
鈥?/div>
Low Gold Plating Thickness on Leads, 40
碌鈥?/div>
Nominal.
鈥?/div>
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
N - Channel Enhancement - Mode Lateral MOSFETs
MRF5S19100HSR3
1990 MHz, 22 W AVG, 28 V
2 x N - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465- 06, STYLE 1
NI - 780
MRF5S19100HR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF5S19100HSR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
- 0.5, +15
269
1.54
- 65 to +150
200
Unit
Vdc
Vdc
W
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 75擄C, 100 W CW
Case Temperature 70擄C, 22 W CW
Symbol
R
胃JC
Value (1)
0.64
0.65
Unit
擄C/W
(1) Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.motorola.com/semiconductors/rf .
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
MOTOROLA RF
錚?/div>
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF5S19100HR3 MRF5S19100HSR3
1

MRF5S19100HSR3 產品屬性

  • 250

  • 分離式半導體產品

  • RF FET

  • -

  • LDMOS

  • 1.93GHz

  • 13.9dB

  • 28V

  • 10µA

  • -

  • 1A

  • 22W

  • 65V

  • NI-780S

  • NI-780S

  • 帶卷 (TR)

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