MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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by MRF5P21180/D
The RF Sub鈥揗icron MOSFET Line
RF Power Field Effect Transistor
N鈥揅hannel Enhancement鈥揗ode Lateral MOSFET
Designed for W鈥揅DMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN鈥揚(yáng)CS/cellular radio and WLL applications.
鈥?/div>
Typical 2鈥揷arrier W鈥揅DMA Performance for V
DD
= 28 Volts,
I
DQ
= 2 x 800 mA, f1 = 2135 MHz, f2 = 2145 MHz,
Channel Bandwidth = 3.84 MHz, Adjacent Channels Measured over
3.84 MHz BW @ f1 鈥?5 MHz and f2 + 5 MHz. Distortion Products
Measured over a 3.84 MHz BW @ f1 鈥?10 MHz and f2 + 10 MHz,
Each Carrier Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Output Power 鈥?38 Watts Avg.
Power Gain 鈥?14 dB
Efficiency 鈥?25.5%
IM3 鈥?37.5 dBc
ACPR 鈥?鈥?1 dBc
鈥?/div>
Internally Matched, Controlled Q, for Ease of Use
鈥?/div>
High Gain, High Efficiency and High Linearity
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 180 Watts CW
Output Power
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large鈥揝ignal Impedance Parameters
鈥?/div>
Qualified Up to a Maximum of 32 V
DD
Operation
MRF5P21180
2170 MHz, 180 W AVG.,
2 x W鈥揅DMA, 28 V
LATERAL N鈥揅HANNEL
RF POWER MOSFET
CASE 375D鈥?4, STYLE 1
NI鈥?230
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Value
65
鈥?.5, +15
437.5
2.5
鈥?5 to +150
200
Unit
Vdc
Vdc
Watts
W/擄C
擄C
擄C
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 0
MOTOROLA RF
錚?/div>
Motorola, Inc. 2002
DEVICE DATA
MRF5P21180
1
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