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MRF5P20180HR6 Datasheet

  • MRF5P20180HR6

  • RF Power Field Effect Transistor

  • 364.32KB

  • 12頁

  • FREESCALE

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Freescale Semiconductor
Technical Data
MRF5P20180HR6
Rev. 0, 12/2004
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for W- CDMA base station applications with frequencies from 1930
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.
To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
鈥?/div>
Typical 2 - carrier W - CDMA Performance: V
DD
= 28 Volts, I
DQ
= 2 x
800 mA, P
out
= 38 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain 鈥?14 dB
Drain Efficiency 鈥?26%
IM3 @ 10 MHz Offset 鈥?- 37.5 dBc @ 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset 鈥?- 41 dBc @ 3.84 MHz Channel Bandwidth
鈥?/div>
Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW
Output Power
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Internally Matched, Controlled Q, for Ease of Use
鈥?/div>
Qualified Up to a Maximum of 32 V
DD
Operation
鈥?/div>
Integrated ESD Protection
鈥?/div>
Lower Thermal Resistance Package
鈥?/div>
Low Gold Plating Thickness on Leads, 40
碌
鈥?/div>
Nominal.
鈥?/div>
In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF5P20180HR6
1990 MHz, 38 W AVG., 28 V
2 x W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFET
CASE 375D - 05, STYLE 1
NI - 1230
Table 1. Maximum Ratings
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
CW Operation
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
CW
Value
- 0.5, +65
- 0.5, +15
530
3.0
- 65 to +150
200
120
Unit
Vdc
Vdc
W
W/擄C
擄C
擄C
W
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 77擄C, 120 W CW
Case Temperature 72擄C, 38 W CW
Symbol
R
胃JC
Value
(1)
0.33
0.35
Unit
擄C/W
1. Refer to AN1955/D,
Thermal Measurement Methodology of RF Power Amplifiers.
Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
錚?/div>
Freescale Semiconductor, Inc., 2004. All rights reserved.
MRF5P20180HR6
1
RF Device Data
Freescale Semiconductor

MRF5P20180HR6 產(chǎn)品屬性

  • 150

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 1.93GHz

  • 14dB

  • 28V

  • 10µA

  • -

  • 1.6A

  • 38W

  • 65V

  • NI-1230

  • NI-1230

  • 帶卷 (TR)

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