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Designed for high current, low power amplifiers up to 1.0 GHz.
Low Noise (2.0 dB @ 500 MHz)
Low Intermodulation Distortion
High Gain
State鈥搊f鈥搕he鈥揂rt Technology
Fine Line Geometry
Arsenic Emitters
Gold Top Metallization
Nichrome Thin鈥揊ilm Ballasting Resistors
Excellent Dynamic Range
Fully Characterized
High Current鈥揋ain Bandwidth Product
Available in Tape and Reel by Adding T1 Suffix to Part Number.
T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel.
MRF5811LT1
IC = 200 mA
LOW NOISE
HIGH鈥揊REQUENCY
TRANSISTOR
NPN SILICON
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CASE 318A鈥?5, STYLE 1
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Thermal Resistance
胃JC
(1)
Total Device Dissipation @ TC = 75擄C
Derate above TC = 75擄C
Storage Junction Temperature Range
Maximum Junction Temperature
Symbol
VCEO
VCBO
VEBO
IC
R
胃JC
PD
Tstg
TJmax
Value
18
36
2.5
200
106
0.71
9.4
鈥?55 to +150
150
Unit
Vdc
Vdc
Vdc
mAdc
擄C/W
Watts
mW/擄C
擄C
擄C
DEVICE MARKING
MRF5811L = 20
NOTES:
1. Case temperature measured on collector lead immediately adjacent to body of package.
REV 1
MOTOROLA RF
漏
Motorola, Inc. 1995
DEVICE DATA
MRF5811LT1
1
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