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MRF5007R1 Datasheet

  • MRF5007R1

  • N-CHANNEL BROADBAND RF POWER FET

  • 165.45KB

  • 10頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF5007/D
The RF MOSFET Line
RF Power Field Effect Transistor
N鈥揅hannel Enhancement鈥揗ode
The MRF5007 is designed for broadband commercial and industrial
applications at frequencies to 520 MHz. The high gain and broadband
performance of this device makes it ideal for large鈥搒ignal, common source
amplifier applications in 7.5 Volt portable FM equipment.
鈥?/div>
Guaranteed Performance at 512 MHz, 7.5 Volts
Output Power = 7.0 Watts
Power Gain = 10 dB Min
Efficiency = 50% Min
鈥?/div>
Characterized with Series Equivalent Large鈥揝ignal Impedance Parameters
鈥?/div>
S鈥揚(yáng)arameter Characterization at High Bias Levels
鈥?/div>
Excellent Thermal Stability
鈥?/div>
All Gold Metal for Ultra Reliability
鈥?/div>
Capable of Handling 20:1 VSWR, @ 10 Vdc, 512 MHz, 2.0 dB Overdrive
鈥?/div>
True Surface Mount Package
鈥?/div>
Available in Tape and Reel by Adding R1 Suffix to Part Number.
R1 Suffix = 500 Units per 16 mm, 7 inch Reel.
MRF5007
MRF5007R1
7.0 W, 7.5 Vdc
512 MHz
N鈥揅HANNEL
BROADBAND
RF POWER FET
CASE 430B鈥?2, Style 1
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 Meg Ohm)
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Value
25
25
鹵
20
4.5
25
0.14
鈥?65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
3.8
Unit
擄C/W
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
MOTOROLA RF
漏
Motorola, Inc. 1995
DEVICE DATA
MRF5007 MRF5007R1
1

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