鈥?/div>
Load Mismatch Capability at High Line and RF Overdrive
MRF492
70 W, 50 MHz
RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TC = 25擄C (1)
Derate above 25擄C
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
Value
18
36
4.0
20
250
1.43
鈥?65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
CASE 211鈥?1, STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (2)
Symbol
R
胃JC
Max
0.7
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage (IC = 100 mAdc, IB = 0)
Collector鈥揈mitter Breakdown Voltage (IC = 50 mAdc, VBE = 0)
Emitter鈥揃ase Breakdown Voltage (IE = 10 mAdc, IC = 0)
Collector Cutoff Current (VCE = 13.6 Vdc, VBE = 0)
V(BR)CEO
V(BR)CES
V(BR)EBO
ICES
18
36
4.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
20
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain (IC = 5.0 Adc, VCE = 5.0 Vdc)
hFE
10
鈥?/div>
150
鈥?/div>
DYNAMIC CHARACTERISTICS
Output Capacitance (VCB = 15 Vdc, IE = 0, f = 1.0 MHz)
Cob
鈥?/div>
275
450
pF
FUNCTIONAL TESTS
Common鈥揈mitter Amplifier Power Gain
(VCC = 12.5 Vdc, Pout = 70 W, f = 50 MHz)
Collector Efficiency
(VCC = 12.5 Vdc, Pout = 70 W, f = 50 MHz)
GPE
畏
11
50
13
鈥?/div>
鈥?/div>
鈥?/div>
dB
%
NOTES:
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF
amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF492
1
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