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MRF448 Datasheet

  • MRF448

  • RF POWER TRANSISTOR NPN SILICON

  • 112.21KB

  • 6頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
The RF Line
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF448/D
NPN Silicon
RF Power Transistor
Designed primarily for high鈥搗oltage applications as a high鈥損ower linear
amplifier from 2.0 to 30 MHz. Ideal for marine and base station equipment.
鈥?/div>
Specified 50 Volt, 30 MHz Characteristics
Output Power = 250 W
Minimum Gain = 12 dB
Efficiency = 45%
鈥?/div>
Intermodulation Distortion @ 250 W (PEP) 鈥?/div>
IMD = 鈥?30 dB (Max)
鈥?/div>
100% Tested for Load Mismatch at all Phase Angles with 3:1 VSWR
MRF448
250 W, 30 MHz
RF POWER
TRANSISTOR
NPN SILICON
CASE 211鈥?1, STYLE 1
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Withstand Current 鈥?10 s
Total Device Dissipation @ TC = 25擄C (1)
Derate above 25擄C
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
鈥?/div>
PD
Tstg
Value
50
100
4.0
16
20
290
1.67
鈥?65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
0.6
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage (IC = 200 mAdc, IB = 0)
Collector鈥揈mitter Breakdown Voltage (IC = 100 mAdc, VBE = 0)
Collector鈥揃ase Breakdown Voltage (IC = 100 mAdc, IE = 0)
Emitter鈥揃ase Breakdown Voltage (IE = 10 mAdc, IC = 0)
V(BR)CEO
V(BR)CES
V(BR)CBO
V(BR)EBO
50
100
100
4.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Vdc
Vdc
(continued)
NOTE:
1. PD is a measurement reflecting short term maximum condition. See SOAR curve for operating conditions.
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF448
1

MRF448 產(chǎn)品屬性

  • M/A-COM Technology Solutions

  • Single

  • 30 MHz

  • 50 V

  • 4 V

  • 16 A

  • 20 A

  • 290 W

  • Case 211-11

  • Tray

  • 10

  • + 150 C

  • - 65 C

  • Screw

  • NPN

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