鈥?/div>
100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR
MRF422
150 W (PEP), 30 MHz
RF POWER
TRANSISTORS
NPN SILICON
CASE 211鈥?1, STYLE 1
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Withstanding Current 鈥?10 s
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
鈥?/div>
P
D
T
stg
Value
40
85
3.0
20
30
290
1.66
鈥?5 to +150
Unit
Vdc
Vdc
Vdc
Adc
Adc
Watts
W/擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
0.6
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage (I
C
= 200 mAdc, I
B
= 0)
Collector鈥揈mitter Breakdown Voltage (I
C
= 100 mAdc, V
BE
= 0)
Collector鈥揃ase Breakdown Voltage (I
C
= 100 mAdc, I
E
= 0)
Emitter鈥揃ase Breakdown Voltage (I
E
= 10 mAdc, I
C
= 0)
Collector Cutoff Current (V
CE
= 28 Vdc, V
BE
= 0, T
C
= 25擄C)
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CES
35
85
85
3.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
20
Vdc
Vdc
Vdc
Vdc
mAdc
(continued)
REV 6
1
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