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MRF392 Datasheet

  • MRF392

  • Tthe RF Line NPN Silicon Push-Pull RF Power Transistor

  • 4頁

  • MA-COM

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SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF392/D
The RF Line
NPN Silicon Push-Pull
RF Power Transistor
Designed primarily for wideband large鈥搒ignal output and driver amplifier
stages in the 30 to 500 MHz frequency range.
鈥?/div>
Specified 28 Volt, 400 MHz Characteristics 鈥?/div>
Output Power = 125 W
Typical Gain = 10 dB
Efficiency = 55% (Typ)
鈥?/div>
Built鈥揑n Input Impedance Matching Networks for Broadband Operation
鈥?/div>
Push鈥揚ull Configuration Reduces Even Numbered Harmonics
鈥?/div>
Gold Metallization System for High Reliability
鈥?/div>
100% Tested for Load Mismatch
MRF392
125 W, 30 to 500 MHz
CONTROLLED 鈥淨鈥?/div>
BROADBAND PUSH鈥揚ULL
RF POWER TRANSISTOR
NPN SILICON
2
6
5, 8
7
3
CASE 744A鈥?1, STYLE 1
The MRF392 is two transistors in a single package with separate base and collector leads
and emitters common. This arrangement provides the designer with a space saving
device capable of operation in a push鈥損ull configuration.
1, 4
PUSH鈥揚ULL TRANSISTORS
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ TC = 25擄C (1)
Derate above 25擄C
Storage Temperature Range
Junction Temperature
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
TJ
Value
30
60
4.0
16
270
1.54
鈥?65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
0.65
Unit
擄C/W
NOTE:
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF push鈥損ull
amplifier.
REV 8
1

MRF392 產品屬性

  • M/A-COM Technology Solutions

  • Dual

  • 500 MHz

  • 30 V

  • 4 V

  • 16 A

  • 270 W

  • Case 744A-01

  • Tray

  • 40

  • + 150 C

  • - 65 C

  • Screw

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