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MRF377HR3 Datasheet

  • MRF377HR3

  • N-Channel Enhancement-Mode Lateral MOSFETs

  • 16頁

  • FREESCALE

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Freescale Semiconductor
Technical Data
MRF377H
Rev. 0, 1/2005
RF Power Field - Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large- signal, common source amplifier applications
in 32 volt digital television transmitter equipment.
鈥?/div>
Typical Broadband DVBT OFDM Performance @ 470 - 860 MHz, 32 Volts,
I
DQ
= 2.0 A, 8K Mode, 64 QAM
Output Power 鈥?45 Watts Avg.
Power Gain
鈮?/div>
16.7 dB
Efficiency
鈮?/div>
21%
ACPR
鈮?/div>
- 58 dBc
鈥?/div>
Typical Broadband ATSC 8VSB Performance @ 470 - 860 MHz, 32 Volts,
I
DQ
= 2.0 A
Output Power 鈥?80 Watts Avg.
Power Gain
鈮?/div>
16.5 dB
Efficiency
鈮?/div>
27.5%
IMD
鈮?/div>
- 31.3 dBc
鈥?/div>
Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 45 Watts DVBT
OFDM Output Power
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Internally Input and Output Matched for Ease of Use
鈥?/div>
Integrated ESD Protection
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Lower Thermal Resistance Package
鈥?/div>
Low Gold Plating Thickness on Leads, 40
碌
鈥?/div>
Nominal.
鈥?/div>
In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
(1)
Rating
Drain - Source Voltage
Gate - Source Voltage
Drain Current - Continuous
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
I
D
P
D
T
stg
T
J
MRF377HR3
MRF377HR5
470 - 860 MHz, 240 W, 32 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 375G - 04, STYLE 1
NI - 860C3
Value
- 0.5, +65
- 0.5, +15
17
648
3.7
- 65 to +150
200
Unit
Vdc
Vdc
Adc
W
W/擄C
擄C
擄C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 81擄C, 105 W CW
Case Temperature 77擄C, 45 W CW
Symbol
R
胃JC
Value
(2,3)
0.27
0.29
Unit
擄C/W
1. Each side of device measured separately.
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
the MTTF calculators by product.
3. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
錚?/div>
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRF377HR3 MRF377HR5
1
RF Device Data
Freescale Semiconductor

MRF377HR3 產品屬性

  • RF Devices Discontinuation 01/Jul/2010

  • 250

  • 分離式半導體產品

  • RF FET

  • -

  • LDMOS

  • 860MHz

  • 18.2dB

  • 32V

  • 17A

  • -

  • 2A

  • 45W

  • 65V

  • NI-860C3

  • NI-860C3

  • 帶卷 (TR)

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