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MRF373ASR1 Datasheet

  • MRF373ASR1

  • RF POWER FIELD EFFECT TRANSISTORS

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF373A/D
The RF MOSFET Line
RF Power Field Effect Transistors
N鈥揅hannel Enhancement鈥揗ode Lateral MOSFETs
Designed for broadband commercial and industrial applications with frequen-
cies from 470 to 860 MHz. The high gain and broadband performance of these
devices make them ideal for large鈥搒ignal, common source amplifier applica-
tions in 28/32 volt transmitter equipment.
鈥?/div>
Typical CW Performance at 860 MHz, 32 Volts, Narrowband Fixture
Output Power 鈥?75 Watts
Power Gain 鈥?18.2 dB
Efficiency 鈥?60%
鈥?/div>
100% Tested for Load Mismatch Stress at All Phase Angles
with 10:1 VSWR @ 32 Vdc, 860 MHz, 75 Watts CW
鈥?/div>
Integrated ESD Protection
D
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large鈥揝ignal
Impedance Parameters
鈥?/div>
In Tape and Reel. R1 = 500 units per 32 mm, 13 inch Reel.
MRF373AR1
MRF373ASR1
470 鈥?860 MHz, 75 W, 32 V
LATERAL N鈥揅HANNEL
BROADBAND
RF POWER MOSFETs
CASE 360B鈥?5, STYLE 1
NI鈥?60
MRF373AR1
G
CASE 360C鈥?5, STYLE 1
NI鈥?60S
MRF373ASR1
S
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
MRF373AR1
MRF373ASR1
Storage Temperature Range
Operating Junction Temperature
T
stg
T
J
Symbol
V
DSS
V
GS
P
D
Value
70
鈥?0.5, +15
197
1.12
278
1.59
鈥?65 to +150
200
Unit
Vdc
Vdc
Watts
W/擄C
Watts
W/擄C
擄C
擄C
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Machine Model
MRF373AR1
MRF373ASR1
Class
1 (Minimum)
M2 (Minimum)
M1 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
MRF373AR1
MRF373ASR1
Symbol
R
胃JC
Max
0.89
0.63
Unit
擄C/W
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 2
MOTOROLA RF
錚?/div>
Motorola, Inc. 2002
DEVICE DATA
MRF373AR1 MRF373ASR1
1

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