CONTROLLED 鈥淨(jìng)鈥?/div>
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 333鈥?4, STYLE 1
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Collector Current
鈥?Peak
Total Device Dissipation @ TC = 25擄C (1)
Derate above 25擄C
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
Value
30
60
4.0
9.0
12
270
1.54
鈥?65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (2)
Symbol
R
胃JC
Max
0.65
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(IC = 80 mAdc, IB = 0)
Collector鈥揈mitter Breakdown Voltage
(IC = 80 mAdc, VBE = 0)
Emitter鈥揃ase Breakdown Voltage
(IE = 8.0 mAdc, IC = 0)
V(BR)CEO
V(BR)CES
V(BR)EBO
30
60
4.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Vdc
NOTES:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 6
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1994
MRF329
1
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