鈥?/div>
Characterized for 100
to
500 MHz
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Collector Current
鈥?Peak
Total Device Dissipation @ T
C
= 25擄C (1)
Derate above 25擄C
Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
stg
Value
33
60
4.0
9.0
12
250
1.43
鈥?5 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
MRF327
80 W, 100 to 500 MHz
CONTROLLED 鈥淨鈥?/div>
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 316鈥?1, STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
0.7
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(I
C
= 80 mAdc, I
B
= 0)
Collector鈥揈mitter Breakdown Voltage
(I
C
= 80 mAdc, V
BE
= 0)
Emitter鈥揃ase Breakdown Voltage
(I
E
= 8.0 mAdc, I
C
= 0)
Collector鈥揃ase Breakdown Voltage
(I
C
= 80 mAdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
V
(BR)CBO
I
CBO
33
60
4.0
60
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
5.0
Vdc
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain (I
C
= 4.0 Adc, V
CE
= 5.0 Vdc)
h
FE
20
鈥?/div>
80
鈥?/div>
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 28 Vdc, I
E
= 0, f = 1.0 MHz)
C
ob
鈥?/div>
95
125
pF
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
REV 1
1
MRF327 產品屬性
0現(xiàn)貨
在售
-
托盤
在售
NPN
33V
-
-
9dB
80W
20 @ 4A，5V
9A
-
底座安裝
316-01
316-01，1 型
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-
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描述
廠商
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