鈥?/div>
Computer鈥揅ontrolled Wirebonding Gives Consistent Input Impedance
MRF323
20 W, 400 MHz
RF POWER
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Collector Current
鈥?Peak
Total Device Dissipation @ T
C
= 25擄C (1)
Derate above 25擄C
Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
stg
Value
33
60
4.0
2.2
3.0
55
310
鈥?5 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
mW/擄C
擄C
CASE 244鈥?4, STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
3.2
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(I
C
= 20 mAdc, I
B
= 0)
Collector鈥揈mitter Breakdown Voltage
(I
C
= 20 mAdc, V
BE
= 0)
Collector鈥揃ase Breakdown Voltage
(I
C
= 20 mAdc, I
E
= 0)
Emitter鈥揃ase Breakdown Voltage
(I
E
= 2.0 mAdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
33
60
60
4.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
2.0
Vdc
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 1.0 Adc, V
CE
= 5.0 Vdc)
h
FE
20
鈥?/div>
80
鈥?/div>
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
1
MRF323 產(chǎn)品屬性
0現(xiàn)貨查看交期
30 : ￥918.45233托盤(pán)
-
托盤(pán)
在售
NPN
33V
-
-
11dB
20W
20 @ 1A，5V
2.2A
-
底座安裝
244-04
244-04，1 型
MRF323相關(guān)型號(hào)PDF文件下載
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