CONTROLLED 鈥淨(jìng)鈥?/div>
BROADBAND RF POWER
TRANSISTOR
NPN SILICON
CASE 316鈥?1, STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
0.8
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(I
C
= 50 mAdc, I
B
= 0)
Collector鈥揈mitter Breakdown Voltage
(I
C
= 50 mAdc, V
BE
= 0)
Collector鈥揃ase Breakdown Voltage
(I
C
= 50 mAdc, I
E
= 0)
Emitter鈥揃ase Breakdown Voltage
(I
E
= 5.0 mAdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
35
65
65
4.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
5.0
Vdc
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 4.0 Adc, V
CE
= 5.0 Vdc)
h
FE
10
鈥?/div>
80
鈥?/div>
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
CB
= 28 Vdc, I
E
= 0, f = 1.0 MHz)
C
ob
鈥?/div>
100
130
pF
NOTE:
(continued)
1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
REV 7
1
MRF316 產(chǎn)品屬性
0現(xiàn)貨查看交期
60 : ￥514.67667托盤
-
托盤
在售
NPN
35V
-
-
13dB
80W
10 @ 4A，5V
9A
-
底座安裝
316-01
316-01，1 型
MRF316相關(guān)型號PDF文件下載
-
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描述
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