鈥?/div>
Gold Metallization System for High Reliability Applications
MRF314
30 W, 30鈥?00 MHz
RF POWER
TRANSISTORS
NPN SILICON
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ T
C
= 25擄C (1)
Derate above 25擄C
Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
stg
Value
35
65
4.0
3.4
82
0.47
鈥?5 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
CASE 211鈥?7, STYLE 1
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
2.13
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(I
C
= 30 mAdc, I
B
= 0)
Collector鈥揈mitter Breakdown Voltage
(I
C
= 30 mAdc, V
BE
= 0)
Collector鈥揃ase Breakdown Voltage
(I
C
= 30 mAdc, I
E
= 0)
Emitter鈥揃ase Breakdown Voltage
(I
E
= 3.0 mAdc, I
C
= 0)
Collector Cutoff Current
(V
CB
= 30 Vdc, I
E
= 0)
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CBO
35
65
65
4.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
3.0
Vdc
Vdc
Vdc
Vdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 1.5 Adc, V
CE
= 5.0 Vdc)
h
FE
20
鈥?/div>
80
鈥?/div>
NOTE:
(continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the devices are operated as RF
amplifiers.
1
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