鈥?/div>
Common Emitter for Improved Stability
MRF313
1.0 W, 400 MHz
HIGH鈥揊REQUENCY
TRANSISTOR
NPN SILICON
CASE 305A鈥?1, STYLE 1
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Continuous
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Symbol
V
CEO
V
CBO
V
EBO
I
C
P
D
T
stg
Value
30
40
3.0
150
6.1
35
鈥?5 to +150
Unit
Vdc
Vdc
Vdc
mAdc
Watts
mW/擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
28.5
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage (I
C
= 10 mAdc, I
B
= 0)
Collector鈥揈mitter Breakdown Voltage (I
C
= 5.0 mAdc, V
BE
= 0)
Collector鈥揃ase Breakdown Voltage (I
C
= 0.1 mAdc, I
E
= 0)
Emitter鈥揃ase Breakdown Voltage (I
E
= 1.0 mAdc, I
C
= 0)
Collector Cutoff Current (V
CE
= 20 Vdc, I
B
= 0)
V
(BR)CEO
V
(BR)CES
V
(BR)CBO
V
(BR)EBO
I
CEO
30
35
35
3.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
1.0
Vdc
Vdc
Vdc
Vdc
mAdc
(continued)
1
MRF313 產(chǎn)品屬性
0現(xiàn)貨查看交期
30 : ￥656.94033托盤
-
托盤
在售
NPN
30V
2.5GHz
-
16dB
1W
20 @ 100mA，10V
150mA
-
底座安裝
305A-01
305A-01，1 型
MRF313相關(guān)型號(hào)PDF文件下載
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