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MRF3010 Datasheet

  • MRF3010

  • LATERAL N-CHANNEL BROADBAND RF POWER MOSFET

  • 8頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF3010/D
The RF MOSFET Line
RF Power
Field Effect Transistor
MRF3010
10 W, 1.6 GHz, 28 V
LATERAL N鈥揅HANNEL
BROADBAND
RF POWER MOSFET
N鈥揅hannel Enhancement鈥揗ode Lateral
MOSFET
Designed for IMARSAT satellite up link at 1.6 to 1.64 GHz, 28 volts, Class AB,
CW amplifier applications.
D
鈥?/div>
Guaranteed Performance @ 1.6 GHz, 28 Volts
Output Power = 10 Watts
Minimum Gain = 9.5 dB @ 10 Watts
Minimum Efficiency = 45% @ 10 Watts
鈥?/div>
High Gain, Rugged Device
鈥?/div>
Bottom Side Source Eliminates DC Isolators,
Reducing Common Mode Inductances
鈥?/div>
Broadband Performance of This Device Makes It
Ideal for Applications from 800 to 1700 MHz,
Common鈥揝ource Class AB Operation.
鈥?/div>
Typical Performance at Class A Operation:
Pout = 2 Watts, VDD = 28 Volts, IDQ = 1 A,
Gain = 12.5 dB, IMD = 鈥?2 dB
鈥?/div>
Capable of Handling 30:1 VSWR, @ 28 Vdc
鈥?/div>
Circuit Board Available Upon Request by Contacting RF Tactical Marketing
in Phoenix, AZ
G
CASE 360B鈥?1, STYLE 1
S
鈥?/div>
Characterized with Small鈥揝ignal S鈥揚arameters from 500 to 2500 MHz
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VGS
Tstg
TJ
Value
65
鹵
20
鈥?65 to +150
200
Unit
Vdc
Vdc
擄C
擄C
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain鈥揝ource Breakdown Voltage
(VGS = 0, ID = 1
碌A(chǔ))
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
Gate鈥揝ource Leakage Current
(VGS = 20 V, VDS = 0)
V(BR)DSS
IDSS
IGSS
65
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
10
1
Vdc
碌A(chǔ)dc
碌A(chǔ)dc
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1998
MRF3010
1

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