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MRF275L Datasheet

  • MRF275L

  • N-CHANNEL BROADBAND RF POWER FET

  • 13頁

  • MA-COM

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SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF275L/D
RF Power
Field-Effect Transistor
N鈥揅hannel Enhancement鈥揗ode
Designed for broadband commercial and military applications using single
ended circuits at frequencies to 500 MHz. The high power, high gain and
broadband performance of this device makes possible solid state transmitters
for FM broadcast or TV channel frequency bands.
鈥?/div>
Guaranteed Performance @ 500 MHz, 28 Vdc
Output Power 鈥?100 Watts
Power Gain 鈥?8.8 dB Typ
Efficiency 鈥?55% Typ
鈥?/div>
100% Ruggedness Tested At Rated Output Power
鈥?/div>
Low Thermal Resistance
鈥?/div>
Low Crss 鈥?17 pF Typ @ VDS = 28 Volts
G
The RF MOSFET Line
MRF275L
100 W, 28 V, 500 MHz
N鈥揅HANNEL
BROADBAND
RF POWER FET
D
CASE 333鈥?4, STYLE 2
S
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VGS
ID
PD
Tstg
TJ
Value
65
鹵
20
13
270
1.54
鈥?65 to +150
200
Unit
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
0.65
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain鈥揝ource Breakdown Voltage
(VGS = 0, ID = 50 mA)
Zero Gate Voltage Drain Current
(VDS = 28 V, VGS = 0)
Gate鈥揃ody Leakage Current
(VGS = 20 V, VDS = 0)
V(BR)DSS
IDSS
IGSS
65
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
2.5
1.0
Vdc
mAdc
碌Adc
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV2
1

MRF275L 產品屬性

  • M/A-COM Technology Solutions

  • Single

  • N-Channel

  • 500 MHz

  • 8.8 dB

  • 100 W

  • 65 V

  • 13 A

  • +/- 20 V

  • + 150 C

  • Case 333-04

  • Tray

  • - 65 C

  • SMD/SMT

  • 270 W

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