鈥?/div>
Typical Performance @ 225 MHz, 28 Vdc
Output Power 鈥?200 Watts
Power Gain 鈥?15 dB
Efficiency 鈥?65%
MRF275G
150 W, 28 V, 500 MHz
N鈥揅HANNEL MOS
BROADBAND
100 鈥?500 MHz
RF POWER FET
D
S
(FLANGE)
CASE 375鈥?4, STYLE 2
D
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage
(RGS = 1.0 M鈩?
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Value
65
65
鹵
40
26
400
2.27
鈥?65 to +150
200
Unit
Vdc
Vdc
Adc
Adc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Max
0.44
Unit
擄C/W
NOTE 鈥?/div>
CAUTION
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
1
next