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MRF255 Datasheet

  • MRF255

  • N-CHANNEL BROADBAND RF POWER FET

  • 155.18KB

  • 8頁(yè)

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF255/D
The RF MOSFET Line
RF Power
Field-Effect Transistor
N鈥揅hannel Enhancement鈥揗ode
Designed for broadband commercial and industrial applications at frequencies
to 54 MHz. The high gain, broadband performance and linear characterization of
this device makes it ideal for large鈥搒ignal, common source amplifier applications
in 12.5 Volt mobile and base station equipment.
鈥?/div>
Guaranteed Performance at 54 MHz, 12.5 Volts
Output Power 鈥?55 Watts PEP
Power Gain 鈥?13 dB Min
Two鈥揟one IMD 鈥?鈥?5 dBc Max
Efficiency 鈥?40% Min, Two鈥揟one Test
鈥?/div>
Characterized with Series Equivalent Large鈥揝ignal Impedance Parameters
鈥?/div>
Excellent Thermal Stability
鈥?/div>
All Gold Metal for Ultra Reliability
鈥?/div>
Aluminum Nitride Package Electrical Insulator
鈥?/div>
Circuit Board Photomaster Available by Ordering Document
MRF255PHT/D from Motorola Literature Distribution.
MRF255
55 W, 12.5 Vdc, 54 MHz
N鈥揅HANNEL
BROADBAND
RF POWER FET
CASE 211鈥?1, STYLE 2
MAXIMUM RATINGS
Rating
Drain鈥揝ource Voltage
Drain鈥揋ate Voltage (RGS = 1.0 M鈩?
Gate鈥揝ource Voltage
Drain Current 鈥?Continuous
Total Device Dissipation @ TC = 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VDGR
VGS
ID
PD
Tstg
TJ
Value
36
36
鹵
20
22
175
1.0
鈥?65 to +150
200
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
1.0
Unit
擄C/W
Handling and Packaging
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling
and packaging MOS devices should be observed.
MOTOROLA RF
漏
Motorola, Inc. 1995
DEVICE DATA
MRF255
1

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