MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF255PHT/D
The RF MOSFET Line
RF Power
Field-Effect Transistor
N鈥揅hannel Enhancement鈥揗ode
MRF255
PHOTOMASTER
CASE 211鈥?1, STYLE 2
RFC1
VGG
+
+
C5
C6
L5
C4
L1
C2
C3
L2
C9
R1
C10
R2
DUT
C7
C8
L3
L4
C11
C12
C14 N2
RF
OUTPUT
C15
C16
+
C17
VDD
RF
INPUT
N1
C1
C1 鈥?470 pF, Chip Capacitor
C2, C3, C11, C12 鈥?20 鈥?200 pF, Trimmer, ARCO #464
C4 鈥?100 pF, Chip Capacitor
C5, C17 鈥?100
碌F,
15 V, Electrolytic
C6 鈥?0.001
碌F,
Disc Ceramic
C7, C8, C9, C10 鈥?330 pF, Chip Capacitor
C14 鈥?1200 pF, ATC Chip Capacitor
C15 鈥?910 pF, 500 V, Dipped Mica
C16 鈥?47
碌F,
16 V, Electrolytic
L1 鈥?8 Turns, #20 AWG, 0.126鈥?ID
L2 鈥?5 Turns, #18 AWG, 0.142鈥?ID
L3 鈥?3 Turns, #20 AWG, 0.102鈥?ID
L4 鈥?7 Turns, #24 AWG, 0.070鈥?ID
L5 鈥?6.5 Turns, #18 AWG, 0.230鈥?ID, 0.5鈥?Long
N1, N2 鈥?Type N Flange Mount
RFC1 鈥?Ferroxcube VK鈥?00鈥?9/4B
R1 鈥?39 k鈩? 1/4 W Carbon
R2 鈥?150
鈩?
1/4 W Carbon
Board 鈥?G鈥?0 .060鈥?/div>
Figure 1. 54 MHz Linear RF Test Circuit Electrical Schematic
Handling and Packaging
鈥?MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling
and packaging MOS devices should be observed.
REV 1
MOTOROLA RF
漏
Motorola, Inc. 1996
DEVICE DATA
MRF255 PHOTOMASTER
1
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