鈥?/div>
Load Mismatch Capability at Rated Pout and Supply Voltage
MRF247
75 W, 175 MHz
CONTROLLED Q
RF POWER
TRANSISTOR
NPN SILICON
CASE 316鈥?1, STYLE 1
MAXIMUM RATINGS
Rating
Collector鈥揈mitter Voltage
Collector鈥揃ase Voltage
Emitter鈥揃ase Voltage
Collector Current 鈥?Peak
Total Device Dissipation @ TC = 25擄C (1)
Derate above 25擄C
Storage Temperature Range
Symbol
VCEO
VCBO
VEBO
IC
PD
Tstg
Value
18
36
4.0
20
250
1.43
鈥?65 to +150
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/擄C
擄C
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case (2)
Symbol
R
胃JC
Max
0.7
Unit
擄C/W
ELECTRICAL CHARACTERISTICS
(TC = 25擄C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector鈥揈mitter Breakdown Voltage
(IC = 100 mAdc, IB = 0)
Collector鈥揈mitter Breakdown Voltage
(IC = 50 mAdc, VBE = 0)
Emitter鈥揃ase Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)CEO
V(BR)CES
V(BR)EBO
18
36
4.0
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
Vdc
Vdc
Vdc
(1) This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier.
(2) Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 1
漏
MOTOROLA RF DEVICE DATA
Motorola, Inc. 1997
MRF247
1
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