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MRF21045LSR3 Datasheet

  • MRF21045LSR3

  • RF Power Field Effect Transistors

  • 12頁

  • MOTOROLA   MOTOROLA

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Freescale Semiconductor, Inc.
Order this document
by MRF21045/D
The RF MOSFET Line
RF Power Field Effect Transistors
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
鈥?/div>
Typical 2-carrier W-CDMA Performance for V
DD
= 28 Volts, I
DQ
= 500 mA,
f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth = 3.84 MHz,
Adjacent Channels measured over 3.84 MHz Bandwidth at f1 - 5 MHz
and f2 +5 MHz, Distortion Products measured over a 3.84 MHz Bandwidth
at f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.3 dB @ 0.01% Probability
on CCDF.
Output Power 鈥?10 Watts Avg.
Efficiency 鈥?23.5%
Gain 鈥?15 dB
IM3 鈥?- 37.5 dBc
ACPR 鈥?- 41 dBc
鈥?/div>
Internally Matched, Controlled Q, for Ease of Use
鈥?/div>
High Gain, High Efficiency and High Linearity
鈥?/div>
Integrated ESD Protection
鈥?/div>
Designed for Maximum Gain and Insertion Phase Flatness
鈥?/div>
Capable of Handling 5:1 VSWR, @ 28 Vdc, 2170 MHz, 45 Watts CW
Output Power
鈥?/div>
Excellent Thermal Stability
鈥?/div>
Characterized with Series Equivalent Large - Signal Impedance Parameters
鈥?/div>
Low Gold Plating Thickness on Leads, 40碌鈥?Nominal.
鈥?/div>
In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 Inch Reel.
N - Channel Enhancement - Mode Lateral MOSFETs
MRF21045LR3
MRF21045LSR3
2170 MHz, 45 W, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
Freescale Semiconductor, Inc...
CASE 465E - 04, STYLE 1
NI - 400
MRF21045LR3
CASE 465F - 04, STYLE 1
NI - 400S
MRF21045LSR3
MAXIMUM RATINGS
Rating
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
C
= 25擄C
Derate above 25擄C
Storage Temperature Range
Operating Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
stg
T
J
Test Conditions
Human Body Model
Machine Model
Value
65
- 0.5, +15
105
0.60
- 65 to +150
200
Unit
Vdc
Vdc
Watts
W/擄C
擄C
擄C
ESD PROTECTION CHARACTERISTICS
Class
1 (Minimum)
M2 (Minimum)
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
胃JC
Max
1.65
Unit
擄C/W
NOTE -
CAUTION
- MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Rev. 9
MOTOROLA RF
錚?/div>
Motorola, Inc. 2004
DEVICE DATA
For More Information On This Product,
Go to: www.freescale.com
MRF21045LR3 MRF21045LSR3
1

MRF21045LSR3 產(chǎn)品屬性

  • RF Devices Discontinuation 01/Jul/2010

  • 250

  • 分離式半導(dǎo)體產(chǎn)品

  • RF FET

  • -

  • LDMOS

  • 2.16GHz

  • 15dB

  • 28V

  • 10µA

  • -

  • 500mA

  • 10W

  • 65V

  • NI-400S

  • NI-400S

  • 帶卷 (TR)

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